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Étude du potentiel de surface sous le seuil des MOSFETs

Étude du potentiel de surface sous le seuil des MOSFETs


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About the Book

Dans ce livre, l'accent a été mis sur la modélisation et l'influence des couches de déplétion autour des régions de source et de drain sur les caractéristiques de sous-seuil d'un transistor MOS à canal court avec un canal uniformément dopé. Un modèle analytique pour le potentiel de surface sous le seuil dans un transistor MOS à canal court a été développé en résolvant l'équation de Poisson pseduo-2D, formulée en appliquant la loi de Gauss à une boîte rectangulaire dans le canal couvrant toute la profondeur de la couche d'appauvrissement. Le modèle a permis de prédire une influence accrue des régions de déplétion de la jonction pour une longueur de canal plus petite et/ou des tensions de polarisation drain/source plus élevées, en raison d'un partage accru des charges. Le même modèle est appliqué pour déterminer le potentiel de surface sous le seuil pour les MOSFET à double halo. La réduction des dimensions du dispositif entraîne une diminution de l'épaisseur de l'oxyde de grille. Il en résulte un effet indésirable d'électrons chauds et une augmentation du courant de tunnel de la grille. Afin de remédier à cet inconvénient, des matériaux High-K sont utilisés à la place du dioxyde de silicium comme matériau isolant sous la grille. Cette modélisation s'avérera bénéfique et contribuera à d'autres travaux de recherche à l'avenir.


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Product Details
  • ISBN-13: 9786206353164
  • Publisher: KS Omniscriptum Publishing
  • Binding: Paperback
  • Language: French
  • Returnable: N
  • Weight: 163 gr
  • ISBN-10: 6206353168
  • Publisher Date: 18 Aug 2023
  • Height: 229 mm
  • No of Pages: 68
  • Spine Width: 4 mm
  • Width: 152 mm


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